Investigations on Ta2O5/ZnO insulator-semiconductor interfaces
Investigations on Ta2O5/ZnO insulator-semiconductor interfaces
- Author(s): S.K. Nandi ; W.-K. Choi ; Y.S. Noh ; M.S. Oh ; S. Maikap ; N.M. Hwang ; D.-Y. Kim ; S. Chatterjee ; S.K. Samanta ; C.K. Maiti
- DOI: 10.1049/el:20020944
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- Author(s): S.K. Nandi 1 ; W.-K. Choi 2 ; Y.S. Noh 2 ; M.S. Oh 2 ; S. Maikap 3 ; N.M. Hwang 3 ; D.-Y. Kim 3 ; S. Chatterjee 1 ; S.K. Samanta 1 ; C.K. Maiti 1
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View affiliations
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Affiliations:
1: Department of Electronics & ECE, IIT, Kharagpur, India
2: Thin Film Technology Research Center, Korea Institute of Science and Technology (KIST), South Korea
3: Center for Microstructure Science of Materials, School of Material Science & Engineering, Seoul National University, Seoul, South Korea
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Affiliations:
1: Department of Electronics & ECE, IIT, Kharagpur, India
- Source:
Volume 38, Issue 22,
24 October 2002,
p.
1390 – 1392
DOI: 10.1049/el:20020944 , Print ISSN 0013-5194, Online ISSN 1350-911X
The electrical and interfacial properties of Ta2O5/ZnO/p-Si metal-insulator-semiconductor structures are investigated using high frequency capacitance-voltage and conductance-voltage characteristics. Charge trapping behaviour under Fowler–Nordheim constant current stressing is also reported. An interface state density (1.22×1012 cm−2 eV−1) has been observed for the Ta2O5/ZnO interface.
Inspec keywords: interface states; tantalum compounds; wide band gap semiconductors; semiconductor-insulator boundaries; zinc compounds; electronic density of states; MIS structures
Other keywords:
Subjects: Electronic structure of crystalline semiconductor compounds and insulators; Metal-insulator-semiconductor structures; Electrical properties of metal-insulator-semiconductor structures; Electronic states (surfaces and interfaces)
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