Investigations on Ta2O5/ZnO insulator-semiconductor interfaces

Investigations on Ta2O5/ZnO insulator-semiconductor interfaces

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The electrical and interfacial properties of Ta2O5/ZnO/p-Si metal-insulator-semiconductor structures are investigated using high frequency capacitance-voltage and conductance-voltage characteristics. Charge trapping behaviour under Fowler–Nordheim constant current stressing is also reported. An interface state density (1.22×1012 cm−2 eV−1) has been observed for the Ta2O5/ZnO interface.


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