Low threshold current density GaAsSb/GaAs quantum well lasers were grown on GaAs substrate using solid source molecular beam epitaxy. The laser emits 1.28 µm light output and demonstrates a very low threshold current density of 210 A/cm2.
Inspec keywords: quantum well lasers; semiconductor growth; Debye temperature; III-V semiconductors; gallium arsenide; molecular beam epitaxial growth
Other keywords:
Subjects: Semiconductor lasers; Vacuum deposition; Vacuum deposition; Lasing action in semiconductors
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