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Low-threshold current GaAsSb/GaAs quantum well lasers grown by solid source molecular beam epitaxy

Low-threshold current GaAsSb/GaAs quantum well lasers grown by solid source molecular beam epitaxy

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Low threshold current density GaAsSb/GaAs quantum well lasers were grown on GaAs substrate using solid source molecular beam epitaxy. The laser emits 1.28 µm light output and demonstrates a very low threshold current density of 210 A/cm2.

References

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