InAs/InP 1550 nm quantum dash semiconductor optical amplifiers

InAs/InP 1550 nm quantum dash semiconductor optical amplifiers

For access to this article, please select a purchase option:

Buy article PDF
(plus tax if applicable)
Buy Knowledge Pack
10 articles for £75.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Your details
Why are you recommending this title?
Select reason:
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

Quantum confined laser and optical amplifier structures based on quantum dots and dashes (QD) have been at the forefront of optoelectronics device research for several years. Owing to their superb optoelectronic properties such as wide gain bandwidth, low threshold current density, low α parameter and fast switching response, QD-based devices are expected to play a major role in future fibre optics systems and networks.


    1. 1)
      • Gain and threshold of three dimensional quantum-box lasers
    2. 2)
      • Gain and threshold characteristics of long wavelength lasers based on InAs/GaAs quantum dots formed by activated alloy phase separation
    3. 3)
    4. 4)
      • High speed modulation and switching characteristics of In(Ga)As–Al(Ga)As self organized quantum dot lasers
    5. 5)
      • InAs/GaInAs quantum dot DFB lasers emitting at 1.3 µm
    6. 6)
      • Ground-state lasing at room temperature in long-wavelength InAs quantum-dot lasers on InP (311) substrates
    7. 7)
      • Long-wavelength InP-based quantum-dash lasers
    8. 8)
      • Orientation dependence of the optical properties in InAs quantum-dash lasers on InP
    9. 9)
      • Symmetric highly efficient (∼0 dBm) wavelength conversion based on four-wave mixing in quantum dot optical amplifiers
    10. 10)
      • Observation of highly nondegenerate four-wave mixing in 1.5 µm travelling wave semiconductor optical amplifiers and estimation of nonlinear gain coefficient

Related content

This is a required field
Please enter a valid email address