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InAs/InP 1550 nm quantum dash semiconductor optical amplifiers

InAs/InP 1550 nm quantum dash semiconductor optical amplifiers

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Quantum confined laser and optical amplifier structures based on quantum dots and dashes (QD) have been at the forefront of optoelectronics device research for several years. Owing to their superb optoelectronic properties such as wide gain bandwidth, low threshold current density, low α parameter and fast switching response, QD-based devices are expected to play a major role in future fibre optics systems and networks.

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