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Linearity of low microwave noise AlGaN/GaN HEMTs

Linearity of low microwave noise AlGaN/GaN HEMTs

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The linearity of low microwave noise AlGaN/GaN HEMTs was evaluated with two-tone excitation measurements at optimum low noise biases. A 0.15×100 µm2 device yields an output third-order intercept point (OIP3) of 23 dBm at Vds=3 V, and Vgs=−5V, where a noise figure (NF) of 1.0 and 1.75 dB was obtained at 10 and 20 GHz, respectively. The C/IM3, linearity figure-of-merit under the large RF signals, saturates near −28 dBc as Vds becomes greater than the knee voltage. Both applied bias and gate periphery dependence of the linearity were evaluated. Realisation of highly linear low-noise GaN HEMTs is feasible.

Inspec keywords: high electron mobility transistors; III-V semiconductors; aluminium compounds; wide band gap semiconductors; intermodulation distortion; gallium compounds; semiconductor device noise; microwave field effect transistors

Other keywords: 10 GHz; saturation behaviour; AlGaN-GaN; figure-of-merit; optimum low noise biases; output third-order intercept point; 20 GHz; two-tone excitation; third-harmonic product; low microwave noise HEMT; linearity; gate periphery dependence; applied bias dependence

Subjects: Solid-state microwave circuits and devices; Other field effect devices

References

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      • N.X. Ngyuen , M. Micovic , W.-S. Wong , P. Hashimoto , P. Janke , D. Harvey , C. Nguyen . Robust low microwave noise GaN MODFETs with 0.6 dB noise figure at 10 GHz. Electron. Lett. , 469 - 471
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      • W. Lu , J. Yang , M.A. Khan , I. Adesida . AlGaN/GaN HEMTs on SiC with over 100 GHz fT and low microwave noise. IEEE Trans. Electron. Devices , 581 - 585
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      • B.M. Green , V. Tilak , S.-J. Lee , H.-T. Kim , J.A. Smart , K.J. Webb , J.R. Shealy , L.F. Eastman . High-power broad-band AlGaN/GaN HEMT MMICs on SiC substrates. IEEE Trans. Microw. Theory Tech , 2486 - 2493
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      • Jenkins, T., Kehias, L., Parikh, P., Wu, Y.-F., Chavarkar, P., Moore, M., Mishra, U.: `Linearity of high Al-content AlGaN/GaN HEMTs', IEEE Device Research Conf., 2001, Notre Dame, Indiana, USA, p. 201–202.
http://iet.metastore.ingenta.com/content/journals/10.1049/el_20020920
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