Linearity of low microwave noise AlGaN/GaN HEMTs

Linearity of low microwave noise AlGaN/GaN HEMTs

For access to this article, please select a purchase option:

Buy article PDF
(plus tax if applicable)
Buy Knowledge Pack
10 articles for £75.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Your details
Why are you recommending this title?
Select reason:
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

The linearity of low microwave noise AlGaN/GaN HEMTs was evaluated with two-tone excitation measurements at optimum low noise biases. A 0.15×100 µm2 device yields an output third-order intercept point (OIP3) of 23 dBm at Vds=3 V, and Vgs=−5V, where a noise figure (NF) of 1.0 and 1.75 dB was obtained at 10 and 20 GHz, respectively. The C/IM3, linearity figure-of-merit under the large RF signals, saturates near −28 dBc as Vds becomes greater than the knee voltage. Both applied bias and gate periphery dependence of the linearity were evaluated. Realisation of highly linear low-noise GaN HEMTs is feasible.


    1. 1)
      • N.X. Ngyuen , M. Micovic , W.-S. Wong , P. Hashimoto , P. Janke , D. Harvey , C. Nguyen . Robust low microwave noise GaN MODFETs with 0.6 dB noise figure at 10 GHz. Electron. Lett. , 469 - 471
    2. 2)
      • W. Lu , J. Yang , M.A. Khan , I. Adesida . AlGaN/GaN HEMTs on SiC with over 100 GHz fT and low microwave noise. IEEE Trans. Electron. Devices , 581 - 585
    3. 3)
      • B.M. Green , V. Tilak , S.-J. Lee , H.-T. Kim , J.A. Smart , K.J. Webb , J.R. Shealy , L.F. Eastman . High-power broad-band AlGaN/GaN HEMT MMICs on SiC substrates. IEEE Trans. Microw. Theory Tech , 2486 - 2493
    4. 4)
      • Jenkins, T., Kehias, L., Parikh, P., Wu, Y.-F., Chavarkar, P., Moore, M., Mishra, U.: `Linearity of high Al-content AlGaN/GaN HEMTs', IEEE Device Research Conf., 2001, Notre Dame, Indiana, USA, p. 201–202.
    5. 5)

Related content

This is a required field
Please enter a valid email address