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Linearity of low microwave noise AlGaN/GaN HEMTs

Linearity of low microwave noise AlGaN/GaN HEMTs

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The linearity of low microwave noise AlGaN/GaN HEMTs was evaluated with two-tone excitation measurements at optimum low noise biases. A 0.15×100 µm2 device yields an output third-order intercept point (OIP3) of 23 dBm at Vds=3 V, and Vgs=−5V, where a noise figure (NF) of 1.0 and 1.75 dB was obtained at 10 and 20 GHz, respectively. The C/IM3, linearity figure-of-merit under the large RF signals, saturates near −28 dBc as Vds becomes greater than the knee voltage. Both applied bias and gate periphery dependence of the linearity were evaluated. Realisation of highly linear low-noise GaN HEMTs is feasible.

References

    1. 1)
      • Robust low microwave noise GaN MODFETs with 0.6 dB noise figure at 10 GHz
    2. 2)
      • AlGaN/GaN HEMTs on SiC with over 100 GHz fT and low microwave noise
    3. 3)
      • High-power broad-band AlGaN/GaN HEMT MMICs on SiC substrates
    4. 4)
      • Jenkins, T., Kehias, L., Parikh, P., Wu, Y.-F., Chavarkar, P., Moore, M., Mishra, U.: `Linearity of high Al-content AlGaN/GaN HEMTs', IEEE Device Research Conf., 2001, Notre Dame, Indiana, USA, p. 201–202
    5. 5)
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