P-type delta-doped SiGe/Si heterostructure field effect transistors

P-type delta-doped SiGe/Si heterostructure field effect transistors

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P-type SiGe/Si HFETs with different position of the δ-doped layer in the SiGe channel are reported for the first time. For the same device structure with a 1×100 µm2 gate, bottom-delta-doped-channel devices display a wide and flat range of uniform gm distribution of 1.4 V, and 0.9 V in top-delta-doped-channel devices. Compared to the latter devices, a high gate-to-drain breakdown voltage (>25 V) due to a better carrier confinement together with a higher current density for the bottom-delta-doped-channel devices was obtained at room temperature, which is expected to provide an additional degree of freedom for Si-based device applications.


    1. 1)
      • A.A. Iliadis , J.K. Zahurak , S.A. Tabatabaei . Application specific devices: transport and performance of quasi-MODFET and the graded base heterojunction bipolar transistor. IEEE Semiconductor Conference
    2. 2)
      • M.T. Yang , Y.J. Chan . Device linear comparisons between doped-channel and modulation-doped designs in pseudomorphic Al0.3Ga0.7As/In0.2Ga0.8As heterostructures. IEEE Electron Device Lett.
    3. 3)
      • Y.J. Chan , M.T. Yang . Device linear improvement by AlGaAs/InaAs heterostructure doped-channel FETs. IEEE Electron Device Lett.
    4. 4)
      • E. Murakami , K. Nakagawa , A. Nishida , M. Miyao . IEEE Trans. Electron Devices. IEEE Trans. Electron Devices
    5. 5)
      • G. Höck , T. Hackbarth , N. Käb , H.J. Herzog , M. Ensico , F. Aniel , P. Crozat , R. Adde , E. Kohn , U. König . 0.1 µm gate length p-type Ge/Si0.4Ge0.6 MODFET with 135 GHz fmax. Electron. Lett.

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