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Electrical isolation of n-type InP using MeV iron implantation at different doses and substrate temperatures

Electrical isolation of n-type InP using MeV iron implantation at different doses and substrate temperatures

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An effective inter-device isolation has been obtained by implanting iron into n-type InP. The effect of 1 MeV iron (Fe) implantation into n-type InP at 77K, room temperature (RT) and 200°C has been investigated with various ion doses in the range of 1×1012 to 1×1015/cm2. It is found that RT and 77K implants show better isolation than 200°C implants. Rutherford backscattering spectrometry (RBS) is used to gain a better understanding of the isolation mechanisms.

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