An ion implanted n⁺-n⁻-p⁺-n⁺ bulk unipolar camel diode on a high resistivity silicon substrate has been designed and fabricated. The bulk unipolar diode characteristics have successfully demonstrated with barrier height of 0.69 V and ideality factor of 1.7. Using multi-implantation process alone to form the layer structure significantly reduces the device unit cost. To the best of the authors' knowledge this is the first fully ion implanted camel diode reported on high resistivity silicon.