Wear-out and breakdown of ultra-thin gate oxides after irradiation

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Wear-out and breakdown of ultra-thin gate oxides after irradiation

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The enhancement of gate leakage current after exposure to ionising radiation is generally believed to be the major challenge for devices and circuits operating in harsh radiation environments. How ultra-thin gate oxides subjected to heavy ion irradiation react to a subsequent electrical stress performed at low voltages has been investigated. Even in devices exhibiting small (or even negligible) enhancement of the leakage current, the time-to-breakdown is substantially reduced in comparison with unirradiated samples due to the onset of a soft or hard breakdown, in contrast with previous results found on thicker oxides.

Inspec keywords: dielectric thin films; ion beam effects; CMOS integrated circuits; MOSFET; semiconductor device breakdown; leakage currents; MOS capacitors

Other keywords: LV electrical stress; ionising radiation; gate oxide wear-out; ultra-thin gate oxides; harsh radiation environments; MOS capacitors; oxide time-to-breakdown; CMOS components; gate leakage current enhancement; gate oxide breakdown; heavy ion irradiation

Subjects: Metal-insulator-semiconductor structures; Radiation effects (semiconductor technology); Insulated gate field effect transistors; Dielectric breakdown and discharges; CMOS integrated circuits

References

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      • Ceschia, M., Paccagnella, A., Cester, A., Ghidini, G., Wyss, J.: `From radiation induced leakage current to soft-breakdown in irradiated MOS devices with ultra-thin gate oxide', Proc. of Materials Research Society Symp., 2000, 592, p. 201–206.
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