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One-stage erbium ASE source with 80 nm bandwidth and low ripples

One-stage erbium ASE source with 80 nm bandwidth and low ripples

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A one-stage erbium ASE source that has an 80 nm flat bandwidth is demonstrated. The ASE source is realised in a 37 m erbium-doped fibre with a 1480 nm laser diode and a 980 nm laser diode as forward and backward pumps respectively. High output power up to 13.5 dBm is obtained with a total pump power of 95.7 mW.

References

    1. 1)
      • R.P. Espindola , G. Ales , J. Park , T.A. Strasser . 80 nm spectrally flattened, high power erbium amplified spontaneous emission fibre source. Electron. Lett. , 1263 - 1265
    2. 2)
    3. 3)
      • Lee, J.H., Ryu, U.-C., Park, N.: `Efficiency improved Er', 13th International Conference on Optical Fiber Sensor, 1999, p. 462–465.
    4. 4)
      • Berendt, M.O., Arellana, W.A., Hdefonso, de Faria, Fragnito, H.L.: `Extended band erbium amplified spontaneous emission source', Lasers and Electro-Optics Europe, Conference Digest, 2000, p. 244.
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