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Gate-to-drain separation and transistor cutoff frequency in wet etched AlGaN/GaN HFETs

Gate-to-drain separation and transistor cutoff frequency in wet etched AlGaN/GaN HFETs

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The variation of cutoff frequency fT with gate-to-drain separation LGD in 0.2 µm gate AlGaN/GaN HFETs fabricated by low-damage isolation techniques is studied. The transistor delay τT=1/2πfT increases linearly with LGD due to the rise in drain resistance with increasing LGD. The resulting apparent gate-drain resistance is higher than the post-process low-field value, and is dependent upon the fabrication process for devices implemented on the same layers, probably reflecting different levels of surface damage.

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http://iet.metastore.ingenta.com/content/journals/10.1049/el_20020641
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