Charge pumping in Sc2O3/GaN gated mos diodes
Charge pumping in Sc2O3/GaN gated mos diodes
- Author(s): J. Kim ; R. Mehandru ; B. Luo ; F. Ren ; B.P. Gila ; A.H. Onstine ; C.R. Abernathy ; S.J. Pearton ; Y. Irokawa
- DOI: 10.1049/el:20020639
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- Author(s): J. Kim 1 ; R. Mehandru 1 ; B. Luo 1 ; F. Ren 1 ; B.P. Gila 2 ; A.H. Onstine 2 ; C.R. Abernathy 2 ; S.J. Pearton 2 ; Y. Irokawa 3
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View affiliations
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Affiliations:
1: Department of Chemical Engineering, University of Florida, Gainesville, USA
2: Department of Material Science and Engineering, University of Florida, Gainesville, USA
3: Toyota Central Research and Development Laboratories, Inc., Nagakute, Aichi, Japan
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Affiliations:
1: Department of Chemical Engineering, University of Florida, Gainesville, USA
- Source:
Volume 38, Issue 16,
1 August 2002,
p.
920 – 921
DOI: 10.1049/el:20020639 , Print ISSN 0013-5194, Online ISSN 1350-911X
The total surface state density was measured in n+p gate-controlled Sc2O3/p-GaN diodes using the charge pumping technique. For MBE deposition of Sc2O3 at 650°C onto a p-GaN layer with hole density 2×1017 cm−3 at 25°C, the total surface state density was 3×1012 cm−2 after implant activation annealling to form the n+ source and drain regions.
Inspec keywords: ion implantation; III-V semiconductors; hole density; scandium compounds; annealing; wide band gap semiconductors; molecular beam epitaxial growth; MIS devices; gallium compounds; surface states
Other keywords:
Subjects: Vacuum deposition; Metal-insulator-semiconductor structures; Semiconductor doping; Annealing processes in semiconductor technology
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