The total surface state density was measured in n+p gate-controlled Sc2O3/p-GaN diodes using the charge pumping technique. For MBE deposition of Sc2O3 at 650°C onto a p-GaN layer with hole density 2×1017 cm−3 at 25°C, the total surface state density was 3×1012 cm−2 after implant activation annealling to form the n+ source and drain regions.
Inspec keywords: ion implantation; III-V semiconductors; hole density; scandium compounds; annealing; wide band gap semiconductors; molecular beam epitaxial growth; MIS devices; gallium compounds; surface states
Other keywords:
Subjects: Vacuum deposition; Metal-insulator-semiconductor structures; Semiconductor doping; Annealing processes in semiconductor technology
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