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Charge pumping in Sc2O3/GaN gated mos diodes

Charge pumping in Sc2O3/GaN gated mos diodes

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The total surface state density was measured in n+p gate-controlled Sc2O3/p-GaN diodes using the charge pumping technique. For MBE deposition of Sc2O3 at 650°C onto a p-GaN layer with hole density 2×1017 cm−3 at 25°C, the total surface state density was 3×1012 cm−2 after implant activation annealling to form the n+ source and drain regions.

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