High performance InP Gunn devices with 34 mW at 193 GHz

High performance InP Gunn devices with 34 mW at 193 GHz

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InP Gunn devices on diamond heatsinks yielded RF output power levels (and corresponding DC-to-RF conversion efficiencies) of 34 mW (0.74%) and 25 mW (0.55%) at second-harmonic frequencies of 193 and 199 GHz, respectively. The measured phase noise was well below −94 dBc/Hz at an off-carrier frequency of 500 kHz.


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    4. 4)
      • Kamoua, R.: `Potential of second-harmonic power generation in InP Gunn oscillators above 200 GHz', SPIE 3465, Proc. 4th Int. Conf. on Millimeter and Submillimeter Waves and Applications, July 1998, San Diego, CA, USA, p. 32–37.
    5. 5)
    6. 6)
    7. 7)
      • Porterfield, D.W.: `A 200-GHz broadband fixed-tuned, planar doubler', Proc. 10th Int. Symp. on Space Terahertz Technology, March 1999, Charlottesville, VA, USA, p. 466–474.
    8. 8)
      • A.V. Räisäinen . Frequency multipliers for millimeter and submillimeter wavelengths. Proc. IEEE , 11 , 1842 - 1852

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