SET-based quantiser circuit for digital communications

Access Full Text

SET-based quantiser circuit for digital communications

For access to this article, please select a purchase option:

Buy article PDF
£12.50
(plus tax if applicable)
Buy Knowledge Pack
10 articles for £75.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

A single electron transistor (SET)-based quantiser circuit has been developed for the purpose of digital communication. The proposed circuit, which consists of only two SET devices and one load capacitor, offers ultra-low power dissipation, small quantisation noise error and zero granular noise error. The proposed circuit does not require any external sampling signal for sampling the baseband signal, the sampling rate can be controlled by varying the device capacitor.

Inspec keywords: quantisation (signal); circuit noise; digital communication; single electron transistors; signal sampling

Other keywords: sampling rate; SET-based quantiser circuit; baseband signal; granular noise error; transmitter system; load capacitor; digital communications; single electron transistor; signal sampling; quantisation noise error; ultra-low power dissipation

Subjects: Signal processing and detection; Quantum interference devices

References

    1. 1)
      • L. Zhuang . Room temperature silicon single-electron quantum-dot transistor switch. IEDM , 167 - 169
    2. 2)
      • Y. Ono . Si complementary single-electron inverter. IEDM , 1140 - 1142
    3. 3)
      • Y. Takahashi . A multi-gate single-electron transistor and its application to an exclusive-OR gate. IEDM , 127 - 130
    4. 4)
      • H. Taub , D.L. Schilling . (1986) Principles of communication systems.
    5. 5)
      • K.K. Likharev . Single-electron devices and their applications. Proc. IEEE , 4 , 606 - 632
    6. 6)
      • C. Wasshuber . (1998) About single-electron devices and circuits.
    7. 7)
      • A. Fukushima . Single electron transistor with two gate inputs. Precision Electromagn. Meas. Conf. Dig. , 591 - 592
http://iet.metastore.ingenta.com/content/journals/10.1049/el_20020308
Loading

Related content

content/journals/10.1049/el_20020308
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading