Selective Si interdiffusion into ion implanted GaAs from SiN and its application to GaAs MESFET
Selective Si interdiffusion into ion implanted GaAs from SiN encapsulation was observed and a GaAs MESFET with a highly conductive layer was developed using the interdiffusion. During the annealing of implanted 29Si at 950°C, Si was selectively diffused into the ion implanted region from SiN encapsulation and formed a highly conductive layer near the surface. The diffused Si improved the ohmic contact resistivity and electrical characteristics of the MESFET.
