Selective Si interdiffusion into ion implanted GaAs from SiN and its application to GaAs MESFET

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Selective Si interdiffusion into ion implanted GaAs from SiN and its application to GaAs MESFET

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Selective Si interdiffusion into ion implanted GaAs from SiN encapsulation was observed and a GaAs MESFET with a highly conductive layer was developed using the interdiffusion. During the annealing of implanted 29Si at 950°C, Si was selectively diffused into the ion implanted region from SiN encapsulation and formed a highly conductive layer near the surface. The diffused Si improved the ohmic contact resistivity and electrical characteristics of the MESFET.

Inspec keywords: annealing; gallium arsenide; chemical interdiffusion; ion implantation; III-V semiconductors; Schottky gate field effect transistors; silicon; elemental semiconductors

Other keywords: annealing; GaAs:Si; ion implanted region; ion implanted GaAs; 950 degC; highly conductive layer; ohmic contact resistivity improvement; implanted Si; electrical characteristics improvement; GaAs MESFET; selective Si interdiffusion; SiN encapsulation; SiN

Subjects: Other field effect devices; Annealing processes in semiconductor technology; Semiconductor doping

References

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      • H. Hsia , Z. Tang , D. Caruth , D. Becher , M. Feng . Direct ion-implanted 0.12 µm GaAs MESFET with ft of 121 GHz and fmax of 160 GHz. IEEE Electron. Device Lett. , 4 , 245 - 247
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