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MOSFET 1/f noise model based on mobility fluctuation in linear region

MOSFET 1/f noise model based on mobility fluctuation in linear region

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A new 1/f noise model for MOSFETs in the linear region, based on the Hooge mobility fluctuation noise expression, is presented. Simulation results for the new model are in good agreement with experimental results; thus, the new model can be used to predict and estimate the 1/f noise performance for p-MOSFET devices.

References

    1. 1)
      • A. Van Der Ziel . (1986) Noise in solid state devices and circuits.
    2. 2)
      • T.G.M. Kleinpenning , L.K.J. Vandamme . Model for 1/f noise in metal-oxide-semiconductor transistors. J. Appl. Phys. , 3 , 1594 - 1596
    3. 3)
      • T.G.M. Kleinpenning . On 1/f trapping noise in MOSTs. IEEE Trans. Electron. Devices , 9 , 2084 - 2089
    4. 4)
    5. 5)
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