The effects of pre-irradiation gate bias stress on the radiation response of power VDMOSFETs are presented, clearly demonstrating the inapplicability of gate bias stressing as a technique for radiation hardening of power MOSFETs.
Inspec keywords: radiation hardening (electronics); interface states; power MOSFET; carrier mobility
Other keywords:
Subjects: Radiation effects (semiconductor technology); Power semiconductor devices; Insulated gate field effect transistors
References
-
-
1)
- K.F. Galloway , R.D. Schrimpf . MOS device degradation due to total dose ionizing radiation in the natural space environment: a review. Microelectron. J. , 67 - 81
-
2)
- P. Picard , C. Brisset , A. Hoffmann , J.P. Charles , F. Joffre , L. Adams , A. Holmes-Siedle . Use of electrical stress and isochronal annealing on power MOSFETs in order to characterize the effects of 60Co irradiation. Microelectron. Reliab. , 1647 - 1652
-
3)
- M. Badila , P. Godignon , J. Millan , S. Berberich , G. Brezeanu . The electron irradiation effects on silicon gate dioxide used for power MOS devices. Microelectron. Reliab. , 1015 - 1018
-
4)
- N. Stojadinovic , S. Dimitrijev . Instabilities in MOS transistors. Microelectron. Reliab. , 371 - 380
-
5)
- P. Picard , C. Brisset , O. Quittard , A. Hoffmann , F. Joffre , J.P. Charles . Radiation hardening of power MOSFETs using electrical stress. IEEE Trans. Nucl. Sci. , 641 - 646
-
6)
- U. Schwalke , M. Polzl , T. Sekinger , M. Kerber . Ultra-thick gate oxides: charge generation and its impact on reliability. Microelectron. Reliab. , 1007 - 1010
-
7)
- N. Stojadinovic , S. Djoric , S. Golubovic , V. Davidovic . Separation of irradiation induced gate oxide charge and interface traps effects in power VDMOSFETs. Electron. Lett. , 1992 - 1993
-
1)
http://iet.metastore.ingenta.com/content/journals/10.1049/el_20020281
Related content
content/journals/10.1049/el_20020281
pub_keyword,iet_inspecKeyword,pub_concept
6
6