Radiation hardening of power MOSFETs using electrical stress
Radiation hardening of power MOSFETs using electrical stress
- Author(s): N. Stojadinovic ; S. Djoric-Veljkovic ; I. Manic ; V. Davidovic ; S. Golubovic
- DOI: 10.1049/el:20020281
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- Author(s): N. Stojadinovic 1 ; S. Djoric-Veljkovic 1 ; I. Manic 1 ; V. Davidovic 1 ; S. Golubovic 1
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View affiliations
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Affiliations:
1: Faculty of Electronic Engineering, University of Nis, Nis, Yugoslavia
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Affiliations:
1: Faculty of Electronic Engineering, University of Nis, Nis, Yugoslavia
- Source:
Volume 38, Issue 9,
25 April 2002,
p.
431 – 432
DOI: 10.1049/el:20020281 , Print ISSN 0013-5194, Online ISSN 1350-911X
The effects of pre-irradiation gate bias stress on the radiation response of power VDMOSFETs are presented, clearly demonstrating the inapplicability of gate bias stressing as a technique for radiation hardening of power MOSFETs.
Inspec keywords: radiation hardening (electronics); interface states; power MOSFET; carrier mobility
Other keywords:
Subjects: Radiation effects (semiconductor technology); Power semiconductor devices; Insulated gate field effect transistors
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