http://iet.metastore.ingenta.com
1887

Radiation hardening of power MOSFETs using electrical stress

Radiation hardening of power MOSFETs using electrical stress

For access to this article, please select a purchase option:

Buy article PDF
$19.95
(plus tax if applicable)
Buy Knowledge Pack
10 articles for $120.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

The effects of pre-irradiation gate bias stress on the radiation response of power VDMOSFETs are presented, clearly demonstrating the inapplicability of gate bias stressing as a technique for radiation hardening of power MOSFETs.

References

    1. 1)
      • K.F. Galloway , R.D. Schrimpf . MOS device degradation due to total dose ionizing radiation in the natural space environment: a review. Microelectron. J. , 67 - 81
    2. 2)
      • N. Stojadinovic , S. Djoric , S. Golubovic , V. Davidovic . Separation of irradiation induced gate oxide charge and interface traps effects in power VDMOSFETs. Electron. Lett. , 1992 - 1993
    3. 3)
    4. 4)
    5. 5)
    6. 6)
    7. 7)
      • N. Stojadinovic , S. Dimitrijev . Instabilities in MOS transistors. Microelectron. Reliab. , 371 - 380
http://iet.metastore.ingenta.com/content/journals/10.1049/el_20020281
Loading

Related content

content/journals/10.1049/el_20020281
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
This is a required field
Please enter a valid email address