Doping effects on thermal behaviour of silicon resistor

Doping effects on thermal behaviour of silicon resistor

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Doping effects on the thermal behaviour of a silicon resistor are studied using different models of hole mobility. The results indicate that the two thermal coefficients of the resistor are strongly dependent on doping concentration. For the first-order coefficient α, there is a minimal value (∼250 ppm/°C) for a particular doping concentration (∼4×1018 cm−3); for the second-order coefficient β, its value decrease monotonously according to doping concentration, until zero.


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