http://iet.metastore.ingenta.com
1887

Doping effects on thermal behaviour of silicon resistor

Doping effects on thermal behaviour of silicon resistor

For access to this article, please select a purchase option:

Buy article PDF
$19.95
(plus tax if applicable)
Buy Knowledge Pack
10 articles for $120.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

Doping effects on the thermal behaviour of a silicon resistor are studied using different models of hole mobility. The results indicate that the two thermal coefficients of the resistor are strongly dependent on doping concentration. For the first-order coefficient α, there is a minimal value (∼250 ppm/°C) for a particular doping concentration (∼4×1018 cm−3); for the second-order coefficient β, its value decrease monotonously according to doping concentration, until zero.

References

    1. 1)
      • D.B.M. Klaassen . A unified mobility model for device simulation – I. Model equations and concentration dependence. Solid-State Electron. , 953 - 959
    2. 2)
      • N.D. Arora , J.R. Hauser , D.J. Roulston . Electron and hole mobilities in silicon as a function of concentration and temperature. IEEE Trans. Electron Devices , 292 - 295
    3. 3)
      • J.M. Dorkel , P. Leturcq . Carrier mobilities in silicon semi-empirically related to temperature doping and injection level. Solid-State Electron. , 821 - 825
    4. 4)
      • Matsuda, K., Kanda, Y.: `Simulation for low temperature coefficient design of piezoresistive and Hall sensors', Proc. MSM2000, Int. Conf. on Modeling and Simulation of Microsystems, 27–29 March 2000, San Diego, CA, USA.
    5. 5)
      • A. Boukabache , P. Pons , G. Blasquez , Z. Dibi . Characterisation and modelling of the mismatch of TCRs and their effects on the drift of the offset voltage of piezoresistive pressure sensors. Sens. Actuators A , 292 - 296
    6. 6)
      • W.M. Bullis , F.H. Brewer , C.D. Kolstad , L.J. Swartzendruber . Temperature coefficient of resistivity of silicon and germanium near room temperature. Solid-State Electron. , 639 - 646
http://iet.metastore.ingenta.com/content/journals/10.1049/el_20020221
Loading

Related content

content/journals/10.1049/el_20020221
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
This is a required field
Please enter a valid email address