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AlGaN/GaN HEMTs on silicon substrates with fTof 32/20 GHz andfmaxof 27/22 GHz for 0.5/0.7 m gate length

AlGaN/GaN HEMTs on silicon substrates with fTof 32/20 GHz andfmaxof 27/22 GHz for 0.5/0.7 m gate length

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AlGaN/GaN HEMTs on silicon substrates have been realised and their static and small signal characteristics investigated. The AlGaN/GaN (x=0.23) material structures were grown on (111) p-Si by LP-MOVPE. Devices exhibit a saturation current density of 0.53 to 0.68 A/mm and a peak extrinsic transconductance of 110 mS/mm. A unity gain frequency of 20 and 32 GHz and a maximum frequency of oscillation of 22 and 27 GHz are obtained for devices with a gate length of 0.7 and 0.5 µm, respectively. These values are the highest reported so far on AlGaN/GaN/Si HEMTs and are comparable to those known for devices using sapphire and SiC substrates.

http://iet.metastore.ingenta.com/content/journals/10.1049/el_20020203
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