InGaP/GaAs0.94Sb0.06/GaAs double heterojunction bipolar transistor

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InGaP/GaAs0.94Sb0.06/GaAs double heterojunction bipolar transistor

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A novel InGaP/GaAs0.94Sb0.06/GaAs double heterojunction bipolar transistor is presented. It features the use of fully strained pseudomorphic GaAs0.94Sb0.06 as the base layer and an InGaP layer as the emitter, which both eliminate misfit dislocations and current blocking, and increase the valence band discontinuity at the InGaP/GaAsSb interface. The device demonstrates a high current gain and a low turn-on voltage.

Inspec keywords: indium compounds; heterojunction bipolar transistors; gallium compounds; III-V semiconductors; gallium arsenide

Other keywords: InGaP/GaAsSb interface; current gain; strained pseudomorphic base layer; InGaP/GaAs0.94Sb0.06/GaAs double heterojunction bipolar transistor; misfit dislocations; turn-on voltage; valence band discontinuity; InGaP-GaAs0.94Sb0.06-GaAs; emitter layer; current blocking

Subjects: Bipolar transistors

References

    1. 1)
      • Xin, H., Tu, C.W., Asbeck, P.M., Welty, R.: `Investigation of ', Proc. Electronics Materials Conf., 1999, Santa Barbara, CA, USA, p. 13.
    2. 2)
      • J.D. Love , W.M. Henry , W.J. Stewart , R.J. Black , S. Lacroix , F. Gonthier . Tapered singlemode fibres and devices. IEE Proc. J, Optoelectron. , 5 , 343 - 354
http://iet.metastore.ingenta.com/content/journals/10.1049/el_20020201
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