It is shown that memory switching in amorphous silicon alloys is affected by ion bombardment. In particular, ion damage lowers the voltage required to form devices and switch them into the on-state. This technique enables optimised non-volatile memory devices to be made with improved switching ratios.
Inspec keywords: semiconductor storage; wide band gap semiconductors; metal-semiconductor-metal structures; electrical conductivity transitions; hydrogen; amorphous semiconductors; silicon compounds; ion beam effects
Other keywords:
Subjects: Electrical properties of metal-semiconductor-metal structures; Metal-insulator transitions and other electronic transitions; Radiation effects (semiconductor technology); Metal-insulator-metal and metal-semiconductor-metal structures; Ion beam effects; Memory circuits
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