Dose dependence of proton-isolated n-type GaAs layers implanted at room temperature and 200°C

Access Full Text

Dose dependence of proton-isolated n-type GaAs layers implanted at room temperature and 200°C

For access to this article, please select a purchase option:

Buy article PDF
£12.50
(plus tax if applicable)
Add to cart
Buy Knowledge Pack
10 articles for £75.00
(plus taxes if applicable)
Add to cart

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

© IEE
Published

Hydrogen has been implanted into n-type GaAs layers to obtain inter-device isolation. The effects of variable doses and target temperature during implantation on the degree of isolation have been investigated. Possible identification of antisite defects responsible for isolation and their sensitivity to enhanced dynamic annealing is discussed. The role of threshold doses for an effective isolation scheme is investigated. It is found that hot implants provide better optimisation of the isolation process.

Inspec keywords: isolation technology; annealing; gallium arsenide; hydrogen; ion implantation; III-V semiconductors; proton effects; antisite defects

Other keywords: 200 C; n-type GaAs layer; threshold dose; process optimisation; proton isolation; hot implant; GaAs:H; 20 C; antisite defect; target temperature; dynamic annealing; hydrogen implantation

Subjects: Semiconductor doping; II-VI and III-V semiconductors; Surface treatment (semiconductor technology); Annealing processes in semiconductor technology

References

    1. 1)
      • J.F. Ziegler , J.P. Biersack , U. Littmark . (1985) The stopping and range of ions in solids.
    2. 2)
    3. 3)
    4. 4)
      • H. Dejun , K.T. Chan , L. Guohui , W. Wexun , E. Zhu . A SI/n+ structure in semi-insulating GaAs substrate by high energy implantation. Nucl. Instrum. Meth. , 65 - 68
    5. 5)
    6. 6)
    7. 7)
      • S.J. Pearton . Ion-implantation doping and isolation of III–V semiconductors. Nucl. Instrum. Meth. , 970 - 977
    8. 8)
      • J.P. de Souza , I. Danilov , H. Boudinov . Electrical isolation in GaAs by light ion irradiation: the role of antisite defects. Appl. Phys. Lett. , 535 - 537
    9. 9)
http://iet.metastore.ingenta.com/content/journals/10.1049/el_20020154
Loading

Related content

content/journals/10.1049/el_20020154
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading