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Dose dependence of proton-isolated n-type GaAs layers implanted at room temperature and 200°C

Dose dependence of proton-isolated n-type GaAs layers implanted at room temperature and 200°C

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Hydrogen has been implanted into n-type GaAs layers to obtain inter-device isolation. The effects of variable doses and target temperature during implantation on the degree of isolation have been investigated. Possible identification of antisite defects responsible for isolation and their sensitivity to enhanced dynamic annealing is discussed. The role of threshold doses for an effective isolation scheme is investigated. It is found that hot implants provide better optimisation of the isolation process.

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