Fully integrated 0.25 lµm CMOS VCSEL driver with current peaking

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Fully integrated 0.25 lµm CMOS VCSEL driver with current peaking

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A vertical-cavity-surface-emitting laser (VCSEL) driver chip based on a novel circuit concept for current peaking has been designed and fabricated in a 0.25 µm complementary metal-oxide-semiconductor (CMOS) process. This concept allows the easy integration of a peaking driving scheme in CMOS. Experimental results show speed extension from 500 Mbit/s for current on–off to 3.9 Gbit/s for current peaking driving.

Inspec keywords: surface emitting lasers; driver circuits; CMOS integrated circuits; laser accessories; semiconductor lasers

Other keywords: 0.25 micron; CMOS; speed extension; vertical-cavity-surface-emitting laser; current peaking; current on-off; 500 Mbit/s to 3.9 Gbit/s; peaking driving scheme; VCSEL driver

Subjects: Lasing action in semiconductors; Laser resonators and cavities; CMOS integrated circuits; Semiconductor lasers; Laser resonators and cavities; Design of specific laser systems; Laser accessories and instrumentation

References

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      • King, R., Michalzik, R., Wiedenmann, D., Jäger, R., Schnitzer, P., Knödel, T., Ebeling, K.J.: `2D VCSEL arrays for chip-level optical interconnects', Proc. SPIE, Vertical-cavity surface-emitting lasers III, San Jose, CA, USA, 3632, p. 363–372.
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      • R.P. Schneider, Jr. , M.R.T. Tan , S.W. Corzine , S.Y. Wang . Oxide-confined 850 nm vertical-cavity lasers for multimode-fibre data communications. Electron. Lett. , 1300 - 1301
    5. 5)
      • B. Madhavan , A.F.J. Levi . Low-power 2.5 Gbit/s VCSEL driver in 0.5 µm CMOS technology. Electron. Lett. , 178 - 179
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