The charge-to-breakdown of 3.3 nm oxynitride films shows significant degradation after irradiation with 342 MeV Au ions. In contrast, 5.4 nm Al2O3 films exhibit much less degradation for similar heavy-ion stress.
Inspec keywords: semiconductor device reliability; Weibull distribution; radiation hardening (electronics); dielectric thin films; ion beam effects; silicon compounds; leakage currents; MOSFET; MOS capacitors; alumina
Other keywords:
Subjects: Insulated gate field effect transistors; Capacitors; Radiation effects (semiconductor technology); Metal-insulator-semiconductor structures
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