High brightness 735 nm single emitter tapered diode lasers were manufactured and analysed. A beam propagation factor M 2 smaller than 1.4 is achieved up to an output power of 2 W.
References
-
-
1)
-
P.L. Tihanyi ,
F.C. Jain ,
M.J. Robinson ,
J.E. Dixon ,
J.E. Williams ,
K. Meehan ,
M.S. O’Neill ,
L.S. Heath ,
D.M. Beyea
.
High power AlGaAs-GaAs visible lasers.
IEEE Photonics Technol. Lett.
,
775 -
777
-
2)
-
E.S. Kintzer ,
J.N. Walpole ,
S.R. Chinn ,
C.A. Wang ,
L.J. Missaggia
.
High-power, strained-layer amplifiers and lasers with tapered gain regions.
IEEE Photonics Technol. Lett.
,
605 -
608
-
3)
-
J.P. Donnelly ,
J.N. Walpole ,
S.H. Groves ,
R.J. Bailey ,
L.J. Missaggia ,
A. Napoleone ,
R.E. Reeder ,
C.C. Cook
.
1.5-µm tapered-gain-region lasers with high-CW output powers.
IEEE Photonics Technol. Lett.
,
10
-
4)
-
M. Mikulla ,
P. Chazan ,
A. Schmitt ,
S. Morgott ,
A. Wetzel ,
M. Walther ,
R. Kiefer ,
W. Pletschen ,
J. Braunstein ,
G. Weimann
.
High-brightness tapered semiconductor laser oscillators and amplifiers with low-modal gain epilayer-structures.
IEEE Photonics Technol. Lett.
,
654 -
656
-
5)
-
A. Al-Muhanna ,
J.K. Wade ,
T. Earles ,
J. Lopez ,
L.J. Mawst
.
High-performance, reliable, 730-nm-emitting Al-free active region diodelasers.
Appl. Phys. Lett.
,
2869 -
2871
-
6)
-
J.N. Walpole
.
Semiconductor amplifiers and lasers with tapered gain regions.
Opt. Quantum Electron.
,
623 -
645
-
7)
-
R. Singh ,
D. Bull ,
F.P. Dabkowski ,
E. Clausen ,
A.K. Chin
.
High-power, reliable operation of 730 nm AlGaAs laser diodes.
Appl. Phys. Lett.
,
2002 -
2004
-
8)
-
M.A. Emanuel ,
J.A. Skidmore ,
M. Jansen ,
R. Nabiev
.
High-power InAlGaAs-GaAs laser diode emitting near 731 nm.
IEEE Photonics Technol. Lett.
,
1451 -
1453
-
9)
-
B. Sumpf ,
G. Beister ,
G. Erbert ,
J. Fricke ,
A. Knauer ,
W. Pittroff ,
P. Ressel ,
J. Sebastian ,
H. Wenzel ,
G. Tränkle
.
2 W reliable operation of λ=735 nm GaAsP/AlGaAs laser diodes.
Electron. Lett.
,
351 -
353
http://iet.metastore.ingenta.com/content/journals/10.1049/el_20020107
Related content
content/journals/10.1049/el_20020107
pub_keyword,iet_inspecKeyword,pub_concept
6
6