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AlGaN/GaN HEMTs on resistive Si(111) substrate grown by gas-source MBE

AlGaN/GaN HEMTs on resistive Si(111) substrate grown by gas-source MBE

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Al0.3Ga0.7N/GaN high electron mobility transistor (HEMT) structures have been grown on resistive Si(111) substrate by molecular beam epitaxy (MBE) using ammonia (NH3). The use of an AlN/GaN intermediate layer allows a resistive buffer layer to be obtained. High sheet carrier density and high electron mobility are obtained in the channel. A device with 0.5 μm gate length has been realised exhibiting a maximum extrinsic transconductance of 160 mS/mm and drain-source current exceeding 600 mA/mm. Small-signal measurements show ft of 17 GHz and fmax of 40 GHz.


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