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AlGaN/GaN HEMTs on resistive Si(111) substrate grown by gas-source MBE

AlGaN/GaN HEMTs on resistive Si(111) substrate grown by gas-source MBE

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Al0.3Ga0.7N/GaN high electron mobility transistor (HEMT) structures have been grown on resistive Si(111) substrate by molecular beam epitaxy (MBE) using ammonia (NH3). The use of an AlN/GaN intermediate layer allows a resistive buffer layer to be obtained. High sheet carrier density and high electron mobility are obtained in the channel. A device with 0.5 μm gate length has been realised exhibiting a maximum extrinsic transconductance of 160 mS/mm and drain-source current exceeding 600 mA/mm. Small-signal measurements show ft of 17 GHz and fmax of 40 GHz.

Inspec keywords: Hall mobility; microwave field effect transistors; millimetre wave field effect transistors; microwave power transistors; current density; wide band gap semiconductors; S-parameters; chemical beam epitaxial growth; III-V semiconductors; gallium compounds; power HEMT; aluminium compounds; semiconductor growth; millimetre wave power transistors

Other keywords: Hall mobility; gas-source MBE; two-dimensional electron gas; maximum extrinsic transconductance; high power capability; small-signal measurements; Si; 40 GHz; AlGaN-GaN; resistive buffer layer; high electron mobility transistor; high sheet carrier density; 17 GHz; resistive substrate; drain-source current; S-parameter measurements; intermediate layer

Subjects: Solid-state microwave circuits and devices; Vacuum deposition; Insulated gate field effect transistors; Power semiconductor devices

References

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      • T. Egawa , N. Nakada , H. Ishikawa , M. Umeno . GaN MESFET on (111) Si substrate grown by MOCVD. Electron. Lett. , 1816 - 1818
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      • E.M. Chumbes , A.T. Schremer , J.A. Smart , Y. Wang , N.C. MacDonald , D. Hogue , J.J. Komiak , S.J. Lichwalla , R.E. Leoni , J.R. Shealy . AlGaN/GaN high electron mobility transistors on Si(111) substrates. IEEE Trans. Electron. Devices , 420 - 426
    3. 3)
      • F. Semond , Y. Cordier , N. Grandjean , F. Natali , B. Damilano , S. Vézian , J. Massies . Molecular beam epitaxy of group-III nitrides on silicon substrates: growth, properties and device applications. Phys. Status Solidi
    4. 4)
      • F. Semond , P. Lorenzini , N. Grandjean , J. Massies . High-electron-mobility AlGaN/GaN heterostructures grown on Si(111) by molecular-beam epitaxy. Appl. Phys. Lett. , 335 - 337
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