http://iet.metastore.ingenta.com
1887

Modelling polarisation of ferroelectric SBT capacitors including temperature dependence

Modelling polarisation of ferroelectric SBT capacitors including temperature dependence

For access to this article, please select a purchase option:

Buy article PDF
$19.95
(plus tax if applicable)
Buy Knowledge Pack
10 articles for $120.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

A new model for thin film SBT ferroelectric capacitors including temperature behaviour is presented. The model, which is based on the Preisach theory, requires parameters that are physically based and which can be easily extracted from measured data. Iterative procedures are not used in the model, which makes it best suited for use in circuit simulators.

References

    1. 1)
      • Miller, S.L., Nasby, R.D., Schwank, J.R., Rodgers, M.S.: `Modeling ferroelectric capacitor switching with asymmetric nonperiodicinput signalsand arbitrary initial conditions', Tech. Rpt., 1991.
    2. 2)
      • Jiang, B., Zurcher, P., Jones, R., Gillespie, S.J., Lee, J.C.: `Computationally efficient ferroelectric capacitor model for circuit simulation', Symp. VLSI Technol., Dig. Tech. Papers, 1997.
    3. 3)
      • G. Arlt . A model for switching and hysteresis in ferroelectric ceramics. Integr. Ferroelectr.
    4. 4)
      • Goebel, H., Ullmann, M., Schindler, G., Kastner, M.: `Distribution function integral method for modeling ferroelectric devices', Int. Conf. Solid State Devices and Materials, SSDM, 1999, Tokyo, Japan.
    5. 5)
      • K.-H. Hellwege . (1981) Landelt Börnstein, Zahlenwerte und Funktion aus Naturwissenschaftenund Technik, Gruppe III: Kristall- und Festkörperphysik, Ferroelektrika und verwandte Substanzen.
    6. 6)
      • E.C. Subbarao . A family of ferroelectric bismuth compounds. J. Phys. Chem. Solids , 665 - 676
    7. 7)
      • C. Kittel . (1973) Einführung in die Festkörperphysik.
    8. 8)
      • J.F. Scott . (2000) Ferroelectric memories.
http://iet.metastore.ingenta.com/content/journals/10.1049/el_20010829
Loading

Related content

content/journals/10.1049/el_20010829
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
This is a required field
Please enter a valid email address