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Nickel ohmic contacts to p- and n-type 4H-SiC

Nickel ohmic contacts to p- and n-type 4H-SiC

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The first demonstration of Ni ohmic contacts to both p+ and n+ 4H-SiC formed by ion implantation is reported. Sample preparation conditions are described and experimental results presented. Specific contact resistances in the range of 10-4 Ωcm2 and 10-6 Ωcm2 for p+ and n+ 4H-SiC, respectively, have been determined by the transfer length method.

References

    1. 1)
      • J. Crofton , P.G. McMullin , J.R. Williams , M.J. Bozack . High-temperature ohmic contact to n-type 6H-SiC using nickel. J. Appl. Phys. , 3 , 1317 - 1319
    2. 2)
      • T. Uemoto . Reduction of ohmic contact resistance on n-type 6H-SiC by heavy doping. Jpn. J. Appl. Phys., Pt. 2 , L7 - L9
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