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Transferred-substrate InP/InGaAs/InP double heterojunction bipolar transistors with fmax = 425 GHz

Transferred-substrate InP/InGaAs/InP double heterojunction bipolar transistors with fmax = 425 GHz

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InP/InGaAs/InP double heterojunction bipolar transistors (DHBTs) with fmax = 425 GHz and fτ = 141 GHz using transferred-substrate technology are reported. This is the highest reported fmax for a DHBT. The breakdown voltage BVCEO is 8 V at JC = 5 × 104 A/cm2 and the DC current gain β is 43.

Inspec keywords: indium compounds; III-V semiconductors; millimetre wave power transistors; microwave bipolar transistors; semiconductor device breakdown; semiconductor device measurement; millimetre wave bipolar transistors; gallium arsenide; microwave power transistors; heterojunction bipolar transistors; power bipolar transistors

Other keywords: breakdown voltage; transferred-substrate technology; high speed high power applications; DC current gain; InP-InGaAs-InP; 8 V; InP/InGaAs/InP DHBTs; 425 GHz; maximum frequency of oscillation; transferred-substrate InP/InGaAs/InP double heterojunction bipolar transistors; 141 GHz

Subjects: Solid-state microwave circuits and devices; Bipolar transistors; Power semiconductor devices

References

    1. 1)
      • Q. Lee , S.C. Martin , D. Mensa , R.P. Smith , J. Guthrie , M.J.W. Rodwell . Submicron transferred-substrate heterojunction bipolar transistors. IEEE Electron Device Lett. , 8 , 396 - 398
    2. 2)
      • Rodwell, M., Lee, Q., Mensa, D., Guthrie, J., Jaganathan, S., Mathew, T., Long, S.: `48 GHz digital ICs using transferred substrate HBT', IEEE GaAs IC Symp. Tech. Dig., 1998, p. 113–117.
    3. 3)
      • Q. Lee , B. Agarwal , R. Pullela , D. Mensa , J. Guthrie , L. Samoska , M. Rodwell . A >400 GHz fmax transferred-substrate heterojunction bipolartransistor IC technology. IEEE Electron Device Lett. , 77 - 79
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