The first surface-textured thin-film GalnP/AlGalnP light-emitting diodes operating at a wavelength of 650 nm are presented. Unencapsulated devices reach an external quantum efficiency of 24%, which is further increased to 31% by encapsulation. The optical output power is 4 mW at a current of 7 mA.
References
-
-
1)
-
I. Schnitzer ,
E. Yablonovitch ,
C. Caneau ,
T.J. Gmitter ,
A. Scherer
.
30% external quantum efficiency from surface textured, thin-film light-emittingdiodes.
Appl. Phys. Lett.
,
16 ,
2174 -
2176
-
2)
-
M.R. Krames ,
M. Ochiai-Holcomb ,
G.E. Hofler ,
C. Carter-Coman ,
E.I. Chen ,
I.H. Tan ,
P. Grillot ,
N.F. Gardner ,
H.C. Chui ,
J.W. Huang ,
S.A. Stockman ,
J.A. Kish ,
M.G. Craford
.
High-power truncated-inverted-pyramid (AlxGa1-x)0.5In0.5P/GaPlight-emitting diodes exhibiting > 50% external quantum efficiency.
Appl. Phys. Lett.
,
16 ,
2365 -
2367
-
3)
-
R. Wirth ,
C. Karnutsch ,
S. Kugler ,
S. Thaler ,
K. Streubel
.
Red and orange resonant-cavity LEDs.
Proc. SPIE
-
4)
-
M. Saarinen ,
V. Vilokkinen ,
Dumitrescu ,
M. Pessa
.
Resonant-cavity light-emitting diodes operating at 655 nm with a highexternal quantum efficiency and light power.
Photonics Technol. Lett.
,
1 ,
10 -
12
-
5)
-
W. Schmid ,
M. Scherer ,
R. Jager ,
P. Stauss ,
K. Streubel ,
K.J. Ebeling
.
Efficient light-emitting diodes with radial outcoupling taper at 980nm and 630 nm emission wavelength.
Proc. SPIE
-
6)
-
R. Windisch ,
B. Dutta ,
M. Kuijk ,
A. Knobloch ,
S. Meinlschmidt ,
S. Schoberth ,
P. Kiesel ,
G. Borghs ,
G.H. Döhler ,
P. Heremans
.
40% efficient thin-film surface-textured light-emitting diodes by optimizationof natural lithography.
IEEE Trans. Electron Devices
,
7 ,
1492 -
1498
-
7)
-
N. Linder ,
S. Kugler ,
P. Stauss ,
K.P. Streubel ,
R. Wirth ,
H. Zull
.
High-brightness AlGaInP light-emitting diodes using surface texturing.
Proc. SPIE
http://iet.metastore.ingenta.com/content/journals/10.1049/el_20010549
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