High-efficiency thin-film light-emitting diodes at 650 nm
High-efficiency thin-film light-emitting diodes at 650 nm
- Author(s): C. Rooman ; R. Windisch ; M. D'Hondt ; B. Dutta ; P. Modak ; P. Mijlemans ; G. Borghs ; R. Vounckx ; I. Moerman ; M. Kuijk ; P. Heremans
- DOI: 10.1049/el:20010549
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- Author(s): C. Rooman 1 ; R. Windisch 1 ; M. D'Hondt 2 ; B. Dutta 1 ; P. Modak 3 ; P. Mijlemans 2 ; G. Borghs 1 ; R. Vounckx 4 ; I. Moerman 3 ; M. Kuijk 4 ; P. Heremans 1
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View affiliations
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Affiliations:
1: IMEC, Leuven, Belgium
2: Advanced Materials, Union Minière, Olen, Belgium
3: Department INTEC, University of Gent/IMEC, Gent, Belgium
4: Department ETRO, University of Brussels V.U.B., Brussels, Belgium
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Affiliations:
1: IMEC, Leuven, Belgium
- Source:
Volume 37, Issue 13,
21 June 2001,
p.
852 – 853
DOI: 10.1049/el:20010549 , Print ISSN 0013-5194, Online ISSN 1350-911X
The first surface-textured thin-film GalnP/AlGalnP light-emitting diodes operating at a wavelength of 650 nm are presented. Unencapsulated devices reach an external quantum efficiency of 24%, which is further increased to 31% by encapsulation. The optical output power is 4 mW at a current of 7 mA.
Inspec keywords: light emitting diodes; optical films; encapsulation; gallium compounds; semiconductor device packaging; indium compounds; III-V semiconductors
Other keywords:
Subjects: Product packaging; Optical coatings and filters; Light emitting diodes; Optoelectronics manufacturing; Packaging
References
-
-
1)
- I. Schnitzer , E. Yablonovitch , C. Caneau , T.J. Gmitter , A. Scherer . 30% external quantum efficiency from surface textured, thin-film light-emittingdiodes. Appl. Phys. Lett. , 16 , 2174 - 2176
-
2)
- M.R. Krames , M. Ochiai-Holcomb , G.E. Hofler , C. Carter-Coman , E.I. Chen , I.H. Tan , P. Grillot , N.F. Gardner , H.C. Chui , J.W. Huang , S.A. Stockman , J.A. Kish , M.G. Craford . High-power truncated-inverted-pyramid (AlxGa1-x)0.5In0.5P/GaPlight-emitting diodes exhibiting > 50% external quantum efficiency. Appl. Phys. Lett. , 16 , 2365 - 2367
-
3)
- R. Wirth , C. Karnutsch , S. Kugler , S. Thaler , K. Streubel . Red and orange resonant-cavity LEDs. Proc. SPIE
-
4)
- M. Saarinen , V. Vilokkinen , Dumitrescu , M. Pessa . Resonant-cavity light-emitting diodes operating at 655 nm with a highexternal quantum efficiency and light power. Photonics Technol. Lett. , 1 , 10 - 12
-
5)
- W. Schmid , M. Scherer , R. Jager , P. Stauss , K. Streubel , K.J. Ebeling . Efficient light-emitting diodes with radial outcoupling taper at 980nm and 630 nm emission wavelength. Proc. SPIE
-
6)
- R. Windisch , B. Dutta , M. Kuijk , A. Knobloch , S. Meinlschmidt , S. Schoberth , P. Kiesel , G. Borghs , G.H. Döhler , P. Heremans . 40% efficient thin-film surface-textured light-emitting diodes by optimizationof natural lithography. IEEE Trans. Electron Devices , 7 , 1492 - 1498
-
7)
- N. Linder , S. Kugler , P. Stauss , K.P. Streubel , R. Wirth , H. Zull . High-brightness AlGaInP light-emitting diodes using surface texturing. Proc. SPIE
-
1)
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