High-efficiency thin-film light-emitting diodes at 650 nm
High-efficiency thin-film light-emitting diodes at 650 nm
- Author(s): C. Rooman ; R. Windisch ; M. D'Hondt ; B. Dutta ; P. Modak ; P. Mijlemans ; G. Borghs ; R. Vounckx ; I. Moerman ; M. Kuijk ; P. Heremans
- DOI: 10.1049/el:20010549
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- Author(s): C. Rooman 1 ; R. Windisch 1 ; M. D'Hondt 2 ; B. Dutta 1 ; P. Modak 3 ; P. Mijlemans 2 ; G. Borghs 1 ; R. Vounckx 4 ; I. Moerman 3 ; M. Kuijk 4 ; P. Heremans 1
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View affiliations
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Affiliations:
1: IMEC, Leuven, Belgium
2: Advanced Materials, Union Minière, Olen, Belgium
3: Department INTEC, University of Gent/IMEC, Gent, Belgium
4: Department ETRO, University of Brussels V.U.B., Brussels, Belgium
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Affiliations:
1: IMEC, Leuven, Belgium
- Source:
Volume 37, Issue 13,
21 June 2001,
p.
852 – 853
DOI: 10.1049/el:20010549 , Print ISSN 0013-5194, Online ISSN 1350-911X
The first surface-textured thin-film GalnP/AlGalnP light-emitting diodes operating at a wavelength of 650 nm are presented. Unencapsulated devices reach an external quantum efficiency of 24%, which is further increased to 31% by encapsulation. The optical output power is 4 mW at a current of 7 mA.
Inspec keywords: light emitting diodes; optical films; encapsulation; gallium compounds; semiconductor device packaging; indium compounds; III-V semiconductors
Other keywords:
Subjects: Product packaging; Optical coatings and filters; Light emitting diodes; Optoelectronics manufacturing; Packaging
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