High-efficiency thin-film light-emitting diodes at 650 nm

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High-efficiency thin-film light-emitting diodes at 650 nm

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Published

The first surface-textured thin-film GalnP/AlGalnP light-emitting diodes operating at a wavelength of 650 nm are presented. Unencapsulated devices reach an external quantum efficiency of 24%, which is further increased to 31% by encapsulation. The optical output power is 4 mW at a current of 7 mA.

Inspec keywords: light emitting diodes; optical films; encapsulation; gallium compounds; semiconductor device packaging; indium compounds; III-V semiconductors

Other keywords: 24 percent; thin-film; thin-film light-emitting diodes; surface-textured; unencapsulated devices; optical output power; 31 percent; 4 mW; 650 nm; encapsulation; external quantum efficiency; GaInP-AlGaInP; 7 mA; GaInP-AlGaInP light-emitting diodes

Subjects: Product packaging; Optical coatings and filters; Light emitting diodes; Optoelectronics manufacturing; Packaging

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