High power density of AlGaAs/InGaAs doped-channel FETs with low DC power supply

High power density of AlGaAs/InGaAs doped-channel FETs with low DC power supply

For access to this article, please select a purchase option:

Buy article PDF
(plus tax if applicable)
Buy Knowledge Pack
10 articles for $120.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Your details
Why are you recommending this title?
Select reason:
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

High power density Al0.3Ga0.7As/In0.15Ga0.85As doped-channel FETs (modified DCFETs) biased at 3 V for 2.4 GHz wireless communication applications are proposed. A planar Si δ-doped layer is inserted inside the wide-bandgap undoped AlGaAs layer to reduce parasitic resistances and enhance the device microwave power performance. The modified DCFETs (M-DCFETs) exhibit an output power density of 302 mW/mm, a power-added efficiency of 52%, and a linear power gain of 19 dB under 2.4 GHz operation for a 1 mm gate-width device. These characteristics suggest that doped-channel FETs with a planar Si δ-doped layer can be used in high linearity and high power microwave device applications.


    1. 1)
      • F.T. Chien , S.C. Chiol , Y.J. Chan . Microwave power performance comparison between single and dual doped-channeldesign in AlGaAs/InGaAs HFETs. IEEE Electron Device Lett. , 60 - 62
    2. 2)
      • Y.S. Lin , S.S. Lu , T.P. Sun . High-linearity high-current-drivablity Ga0.51In0.49P/GaAsMISFET using Ga0.51In0.49P airbridge gate structure grown by GSMBE. IEEE Electron Device Lett. , 518 - 521
    3. 3)
      • Y.L. Lai , E.Y. Chang , C.Y. Chang , T.K. Chen , T.H. Liu , S.P. Wang , T.H. Chen , C.T. Lee . 5 mm high-power-density dual-delta-doped power HEMTs for 3 V L-bandapplication. IEEE Electron Device Lett. , 229 - 231
    4. 4)
      • Y.C. Wang , J.M. Kuo , F. Ren , J.R. Lothian , H.S. Tsai , J.S. Weiner , H.C. Kuo , C.H. Lin , Y.K. Chen , W.E. Mayo . In0.5(AlxGa1-x)0.5P HEMTs for high-efficiencylow-voltage power amplifiers: design, fabrication, and device results. IEEE Trans. Microw. Theory Tech. , 1404 - 1412
    5. 5)
      • Tkachenko, Y., Klimashov, A., Wei, C., Zhao, Y., Bartle, D.: `E-PHEMT for single supply, no drain switch, and high efficiency cellulartelephone power amplifier', GaAs IC Symp. Tech. Dig., 1999, p. 127–130.
    6. 6)
      • Y.L. Lai , E.Y. Chang , C.Y. Chang , M.C. Tai , T.H. Liu , S.P. Wang , K.C. Chuang , C.T. Lee . High-efficiency and low-distortion directly-ion-implanted GaAs power MESFETs for digital personal handy-phone applications. IEEE Electron. Device Lett. , 429 - 431

Related content

This is a required field
Please enter a valid email address