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An SAW oscillator based on a GaN-sapphire acoustic delay line is reported. The oscillation frequency is determined by the GaN sound velocity and transducer period and is sensitive to temperature and to ultraviolet radiation. Our results show that GaN-based structures offer the possibility of integrating the acoustic and electronic elements on a single chip capable of operating at relatively high temperatures.
Inspec keywords: surface acoustic wave delay lines; ultraviolet radiation effects; III-V semiconductors; gallium compounds; wide band gap semiconductors; high-temperature electronics; piezoelectric semiconductors; surface acoustic wave oscillators
Other keywords:
Subjects: Radiation effects (semiconductor technology); Acoustic wave devices