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GaN-based SAW delay-line oscillator

GaN-based SAW delay-line oscillator

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An SAW oscillator based on a GaN-sapphire acoustic delay line is reported. The oscillation frequency is determined by the GaN sound velocity and transducer period and is sensitive to temperature and to ultraviolet radiation. Our results show that GaN-based structures offer the possibility of integrating the acoustic and electronic elements on a single chip capable of operating at relatively high temperatures.

References

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      • G.D. O'Clock , M.T. Duffy . Acoustic surface wave properties of epitaxially grown aluminum nitrideand gallium nitride on sapphire. Appl. Phys. Lett. , 55 - 56
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      • M.A. Khan , R. Rimeika , D. Ciplys , R. Gaska , M.S. Shur . Optical guided modes and surface acoustic waves in GaN grown on (0001)sapphire substrates. Phys. Stat. Sol (b) , 477 - 480
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      • C. Deger , E. Born , H. Angerer , O. Ambacher , M. Stutzmann , J. Hornstein , E. Riha , G. Fischerauer . Sound velocity of AlxGa1-xNthin films obtained by surface acoustic-wave measurements. Appl. Phys. Lett. , 2400 - 2402
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      • J.D. Maines , E.G.S. Paige , A.F. Saunders , A.S. Young . Simple technique for the accurate determination of delay-time variationsin acoustic-surface-wave structures. Electron. Lett. , 678 - 680
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