Planar C plus Al co-implanted 5000 V PiN diodes with an effective multistep junction termination extension were designed, modelled and fabricated. The diode I-V characteristics measured at different temperatures along with the multistep junction extension termination design dimensions are reported, showing the realisation of a near-perfect edge termination and a record high current density for the 29.33 µm 1 × 1015 cm-3 doped n- 4H-SiC drift layer used in this study.
References
-
-
1)
-
Y. Sugawara ,
K. Asano ,
R. Singh ,
J.W. Palmour
.
6.2 kV 4H-SiC pin diode with low forward voltage drop.
Mater. Sci. Forum
,
1371 -
1374
-
2)
-
J.B. Fedison ,
Z. Li ,
V. Khemka ,
N. Ramungul ,
T.P. Chow ,
M. Ghezzo ,
J.W. Kretchmer ,
A. Elasser
.
Al/C/B co-implanted high-voltage 4H-SiC PiN junction rectifiers.
Mater. Sci. Forum
,
1367 -
1370
-
3)
-
K. Tone ,
J.H. Zhao ,
M. Weiner ,
M. Pan
.
Fabrication and testing of 1,000 V 4H-SiC MPS diodes in an inductive half-bridge circuit.
Mater. Sci. Forum
,
1187 -
1190
-
4)
-
K. Schoen ,
J.M. Woodall ,
J.A. Cooper ,
M.R. Melloch
.
Design considerations and experimental analysis of high-voltage SiC Schottky barrier rectifiers.
IEEE Trans. Electron Devices
,
1595 -
1604
http://iet.metastore.ingenta.com/content/journals/10.1049/el_20010322
Related content
content/journals/10.1049/el_20010322
pub_keyword,iet_inspecKeyword,pub_concept
6
6