High performance C plus Al co-implanted 5000 V 4H-SiC P+iN diode

Access Full Text

High performance C plus Al co-implanted 5000 V 4H-SiC P+iN diode

For access to this article, please select a purchase option:

Buy article PDF
£12.50
(plus tax if applicable)
Add to cart
Buy Knowledge Pack
10 articles for £75.00
(plus taxes if applicable)
Add to cart

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

© IEE
Published

Planar C plus Al co-implanted 5000 V PiN diodes with an effective multistep junction termination extension were designed, modelled and fabricated. The diode I-V characteristics measured at different temperatures along with the multistep junction extension termination design dimensions are reported, showing the realisation of a near-perfect edge termination and a record high current density for the 29.33 µm 1 × 1015 cm-3 doped n- 4H-SiC drift layer used in this study.

Inspec keywords: current density; ion implantation; p-i-n diodes; silicon compounds; wide band gap semiconductors; solid-state rectifiers

Other keywords: multistep junction termination extension; drift layer; SiC:C,Al; I-V characteristics; 4H-SiC P+iN diode; high performance; high current density; C/Al co-implanted; near-perfect edge termination; planar PiN diodes; rectifiers

Subjects: Junction and barrier diodes; Semiconductor doping

References

    1. 1)
      • Y. Sugawara , K. Asano , R. Singh , J.W. Palmour . 6.2 kV 4H-SiC pin diode with low forward voltage drop. Mater. Sci. Forum , 1371 - 1374
    2. 2)
      • J.B. Fedison , Z. Li , V. Khemka , N. Ramungul , T.P. Chow , M. Ghezzo , J.W. Kretchmer , A. Elasser . Al/C/B co-implanted high-voltage 4H-SiC PiN junction rectifiers. Mater. Sci. Forum , 1367 - 1370
    3. 3)
      • K. Tone , J.H. Zhao , M. Weiner , M. Pan . Fabrication and testing of 1,000 V 4H-SiC MPS diodes in an inductive half-bridge circuit. Mater. Sci. Forum , 1187 - 1190
    4. 4)
      • K. Schoen , J.M. Woodall , J.A. Cooper , M.R. Melloch . Design considerations and experimental analysis of high-voltage SiC Schottky barrier rectifiers. IEEE Trans. Electron Devices , 1595 - 1604
http://iet.metastore.ingenta.com/content/journals/10.1049/el_20010322
Loading

Related content

content/journals/10.1049/el_20010322
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading