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High performance C plus Al co-implanted 5000 V 4H-SiC P+iN diode

High performance C plus Al co-implanted 5000 V 4H-SiC P+iN diode

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Planar C plus Al co-implanted 5000 V PiN diodes with an effective multistep junction termination extension were designed, modelled and fabricated. The diode I-V characteristics measured at different temperatures along with the multistep junction extension termination design dimensions are reported, showing the realisation of a near-perfect edge termination and a record high current density for the 29.33 µm 1 × 1015 cm-3 doped n- 4H-SiC drift layer used in this study.


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