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High performance C plus Al co-implanted 5000 V 4H-SiC P+iN diode

High performance C plus Al co-implanted 5000 V 4H-SiC P+iN diode

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Planar C plus Al co-implanted 5000 V PiN diodes with an effective multistep junction termination extension were designed, modelled and fabricated. The diode I-V characteristics measured at different temperatures along with the multistep junction extension termination design dimensions are reported, showing the realisation of a near-perfect edge termination and a record high current density for the 29.33 µm 1 × 1015 cm-3 doped n- 4H-SiC drift layer used in this study.

References

    1. 1)
      • K. Schoen , J.M. Woodall , J.A. Cooper , M.R. Melloch . Design considerations and experimental analysis of high-voltage SiC Schottky barrier rectifiers. IEEE Trans. Electron Devices , 1595 - 1604
    2. 2)
      • K. Tone , J.H. Zhao , M. Weiner , M. Pan . Fabrication and testing of 1,000 V 4H-SiC MPS diodes in an inductive half-bridge circuit. Mater. Sci. Forum , 1187 - 1190
    3. 3)
      • J.B. Fedison , Z. Li , V. Khemka , N. Ramungul , T.P. Chow , M. Ghezzo , J.W. Kretchmer , A. Elasser . Al/C/B co-implanted high-voltage 4H-SiC PiN junction rectifiers. Mater. Sci. Forum , 1367 - 1370
    4. 4)
      • Y. Sugawara , K. Asano , R. Singh , J.W. Palmour . 6.2 kV 4H-SiC pin diode with low forward voltage drop. Mater. Sci. Forum , 1371 - 1374
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