Damage profile of He implantation in AlGaAs laser diode material detected by photoluminescence

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Damage profile of He implantation in AlGaAs laser diode material detected by photoluminescence

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The extension of the damaged region in a GaAs/AlGaAs layer system after helium isolation implantation was investigated for different energies using the photoluminescence from GaAs quantum wells. It was found that the range of created defects is in good agreement with the results of TRIM simulations for vacancies.

Inspec keywords: quantum well lasers; isolation technology; III-V semiconductors; photoluminescence; ion implantation; gallium arsenide; aluminium compounds; vacancies (crystal)

Other keywords: quantum wells; laser diode material; damage profile; photoluminescence; vacancies; TRIM simulations; GaAs-AlGaAs:He; isolation implantation

Subjects: Lasing action in semiconductors; Surface treatment (semiconductor technology); Photoluminescence in II-VI and III-V semiconductors; Semiconductor doping; Interstitials and vacancies; Doping and implantation of impurities; Design of specific laser systems; Semiconductor lasers

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