Damage profile of He implantation in AlGaAs laser diode material detected by photoluminescence

Damage profile of He implantation in AlGaAs laser diode material detected by photoluminescence

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The extension of the damaged region in a GaAs/AlGaAs layer system after helium isolation implantation was investigated for different energies using the photoluminescence from GaAs quantum wells. It was found that the range of created defects is in good agreement with the results of TRIM simulations for vacancies.


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