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A multistep junction termination extension (MJTE) for SiC power devices, which uses a single-step ion implantation and multiple dry etches, is studied by way of two-dimensional numerical simulations and confirmed by fabricating and measuring a high-voltage implanted 4H-SiC pin diode. It is shown that MJTE is a very effective approach and can be easily implemented in experiment.
Inspec keywords: power semiconductor diodes; silicon compounds; semiconductor device breakdown; p-i-n diodes; semiconductor device models; wide band gap semiconductors; sputter etching; ion implantation
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Subjects: Semiconductor device modelling, equivalent circuits, design and testing; Surface treatment (semiconductor technology); Junction and barrier diodes; Power semiconductor devices; Semiconductor doping