Multistep junction termination extension for SiC power devices

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Multistep junction termination extension for SiC power devices

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A multistep junction termination extension (MJTE) for SiC power devices, which uses a single-step ion implantation and multiple dry etches, is studied by way of two-dimensional numerical simulations and confirmed by fabricating and measuring a high-voltage implanted 4H-SiC pin diode. It is shown that MJTE is a very effective approach and can be easily implemented in experiment.

Inspec keywords: power semiconductor diodes; silicon compounds; semiconductor device breakdown; p-i-n diodes; semiconductor device models; wide band gap semiconductors; sputter etching; ion implantation

Other keywords: two-dimensional numerical simulations; SiC; equipotential lines; multistep junction termination extension; multiple dry etches; high-voltage implanted 4H-SiC pin diode; reverse J-V curves; single-step ion implantation; breakdown voltage; SiC power devices

Subjects: Semiconductor device modelling, equivalent circuits, design and testing; Surface treatment (semiconductor technology); Junction and barrier diodes; Power semiconductor devices; Semiconductor doping

References

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      • J.W. Palmour , C.H. Carter , C.E. Weitzel , K.J. Nordquist . Diamond, SiC and nitride wide-bandgap semiconductors. Mater. Res. Soc. Symp. Proc. , 133 - 144
    2. 2)
      • D. Planson , M.L. Locatelli , S. Ortolland , J.P. Chante , H. Mitlehner , D. Stephani . Periphery protection for silicon carbide devices: state of the art andsimulation. Mater. Sci. Eng. B , 210 - 217
http://iet.metastore.ingenta.com/content/journals/10.1049/el_20010258
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